Noboru Ohtani - Concepedia

Author

Noboru Ohtani

Nippon Steel (Japan)ORCID

Also Known As

N Ohtani, N. Ohtani, Noboru OHTANI, Noboru Ohtani

180

Publications

2.5K

Citations

H-Index

Concepts

All Affiliations

Nippon Steel (Japan)Kwansei Gakuin University Imperial College London University of London

About

Noboru Ohtani is an author at Nippon Steel (Japan) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	26	63	1.9K
2	Applied Physics	25	60	1.8K
3	Natural Sciences	6	6	223
4	Medicine	2	2	101
5	Biochemistry	2	2	101

Noboru Ohtani

Publications

2.1K

Citations

H-Index

Page 1

	Year	Citations
Mechanism of Molten KOH Etching of SiC Single Crystals: Comparative Study with Thermal Oxidation Masakazu Katsuno, Noboru Ohtani, Jun Takahashi, Japanese Journal of Applied Physics Materials EngineeringMaterials ScienceChemical EngineeringMolten KohHigh Temperature Materials	1999	106
Sublimation growth of 6H- and 4H-SiC single crystals in the [11¯0 0] and [1 12¯0] directions Jun Takahashi, Noboru Ohtani, Masakazu Katsuno, Journal of Crystal Growth Materials EngineeringMaterials ScienceEngineeringCrystal Growth TechnologyCondensed Matter Physics	1997	96
A RHEED study of the surface reconstructions of Si(001) during gas source MBE using disilane W.K. Liu, S. M. Mokler, Noboru Ohtani, Surface Science Surface CharacterizationRheed StudyEngineeringPhysicsGas Source Mbe	1992	86
Investigation of heavily nitrogen-doped n+ 4H–SiC crystals grown by physical vapor transport Noboru Ohtani, Masakazu Katsuno, Masashi Nakabayashi, Journal of Crystal Growth Materials ScienceSemiconductor TechnologyEngineeringApplied PhysicsCondensed Matter Physics	2009	78
Structural defects in α-SiC single crystals grown by the modified-Lely method Jun Takahashi, Noboru Ohtani, Masatoshi Kanaya Journal of Crystal Growth Materials ScienceMaterials EngineeringModified-lely MethodEngineeringCrystalline Defects	1996	76
Growth of large high-quality SiC single crystals Noboru Ohtani, Tatsuo Fujimoto, Masakazu Katsuno, Journal of Crystal Growth Materials ScienceMaterials EngineeringEngineeringCrystal Growth TechnologyApplied Physics	2002	68
Detection of stacking faults in 6H-SiC by Raman scattering S. Nakashima, Yasuhiro Nakatake, Hisatomo Harima, Applied Physics Letters Materials ScienceOptical MaterialsEngineeringPhysicsCrystalline Defects	2000	68
Modified-Lely SiC Crystals Grown in [11-00] and [112-0] Directions Jun Takahashi, Noboru Ohtani physica status solidi (b) Materials ScienceMaterials EngineeringEngineeringDislocation InteractionCrystalline Defects	1997	61
Step bunching behaviour on the {0001} surface of hexagonal SiC Noboru Ohtani, Masakazu Katsuno, Takashi Aigo, Journal of Crystal Growth EngineeringMechanical EngineeringApplied PhysicsHexagonal SicCarbide	2000	57
Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy Mingyu Xie, Lianxi Zheng, Sin Hang Cheung, Applied Physics Letters Materials EngineeringMaterials ScienceWide-bandgap SemiconductorMolecular-beam EpitaxyEngineering	2000	54

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