Sublimation growth of 6H- and 4H-SiC single crystals in the [11¯0 0] and [1 12¯0] directions

Investigation of growth processes of ingots of silicon carbide single crystals

Yu. M. Tairov, V. F. Tsvetkov · Journal of Crystal Growth · 1978 · 570 citations

Natural Sciences, Materials Engineering, Materials Science +14

Performance limiting micropipe defects in silicon carbide wafers

Philip G. Neudeck, J. A. Powell · IEEE Electron Device Letters · 1994 · 307 citations · Full text

Engineering, Electrical Engineering, Materials Science +16

Zero-bias resistance of grain boundaries in neutron-transmutation-doped polycrystalline silicon

C. H. Seager, T. G. Castner · Journal of Applied Physics · 1978 · 270 citations

Natural Sciences, Materials Science, Physics +17

General principles of growing large-size single crystals of various silicon carbide polytypes

Yu. M. Tairov, V. F. Tsvetkov · Journal of Crystal Growth · 1981 · 243 citations

Natural Sciences, Materials Engineering, Materials Science +16

Single crystal growth of SiC substrate material for blue light emitting diodes

G. Ziegler, P. Lanig, D. Theis et al. · IEEE Transactions on Electron Devices · 1983 · 198 citations

Engineering, Materials Engineering, Materials Science +17