Sublimation growth of 6H- and 4H-SiC single crystals in the [11¯0 0] and [1 12¯0] directions

Jun Takahashi, Noboru Ohtani, Masakazu Katsuno, +1

Journal of Crystal Growth

Materials EngineeringMaterials ScienceEngineeringCrystal Growth TechnologyCondensed Matter Physics +5

Formation Process of Stacking Faults with Ringlike Distribution in CZ-Si Wafers

Masami Hasebe, Yoshihiko Takeoka, Seiji Shinoyama, +1

Japanese Journal of Applied Physics

EngineeringThermal OxidationSilicon On InsulatorDefect ToleranceRinglike Distribution +15

Redistribution of Fe in thermally annealed semi-insulating InP(Fe): Determination of Fe diffusion coefficient in InP

H. Kamada, Seiji Shinoyama, Akinori Katsui

Journal of Applied Physics

Materials ScienceMagnetic PropertiesEngineeringDiffusion ResistanceFe Outdiffusion +11

Growth of Dislocation-Free Undoped InP Crystals

Seiji Shinoyama, Chikao Uemura, Akio Yamamoto, +1

Japanese Journal of Applied Physics

Materials ScienceEngineeringDislocation InteractionCrystalline DefectsCrystal Material +10

Application of Copper-Decoration Method to Characterize As-Grown Czochralski-Silicon

Tsuyoshi Yamauchi, Yasuo Tsumori, T. Nakashizu, +3

Japanese Journal of Applied Physics

Materials EngineeringMaterials ScienceElectrical EngineeringLead-free PerovskitesEngineering +13

X-ray topographic observation of dislocation generation and propagation in InP single crystal grown by the liquid-encapsulated Czochralski technique

S. Tohno, Seiji Shinoyama, Akio Yamamoto, +1

Journal of Applied Physics

EngineeringCrystal Growth TechnologyCrystal FormationInp Single CrystalsMaterials Science +14

Isoelectronic Double Doping Effect on Dislocation Density of InP Single Crystal

S. Tohno, Eishi Kubota, Seiji Shinoyama, +2

Japanese Journal of Applied Physics

Materials ScienceMaterials EngineeringGa+sb Doping TechniqueEpitaxial GrowthEngineering +11

Growth and crystal quality of inp crystals by the liquid encapsulated czochralski technique

Seiji Shinoyama, Chikao Uemura, Akio Yamamoto, +1

Journal of Electronic Materials

Materials ScienceEngineeringCrystal Growth TechnologyInp CrystalsApplied Physics +5

Silicon Contamination of InP Synthesized under High Phosphorus Pressure

A. Yamamoto, Seiji Shinoyama, Chikao Uemura

Journal of The Electrochemical Society

Materials ScienceChemical EngineeringSilicon ContaminationEngineeringGrowth Rate +8

<i>I</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> x-ray topographic observation of dislocation behavior in In-doped GaAs crystals

S. Tohno, Seiji Shinoyama, Akinori Katsui, +1

Applied Physics Letters

EngineeringUndoped CrystalsSemiconductor NanostructuresSemiconductorsIi-vi Semiconductor +15