Growth of Dislocation-Free Undoped InP Crystals

Abstract

Dislocation-free undoped InP crystals were grown by the liquid encapsulation Czochralski method by means of a necking-in procedure. A low temperature gradient near the solid-liquid interface was essential for growth, and a temperature gradient of 55°C/cm enabled the growth of a dislocation-free crystal in a pulling of the <111> P direction up to a diameter of 15 mm. No etch pits (either D- or S-pit) were observed on the etched surfaces of wafers cut from each position of the crystal. This suggests the absence of microdefects in the crystal.