Masatoshi Kanaya - Concepedia

Author

Masatoshi Kanaya

Nippon Steel (Japan)

Also Known As

M Kanaya, M. Kanaya, Masatoshi KANAYA, Masatoshi Kanaya, Masatoshi Kanaya Masatoshi Kanaya

Publications

847

Citations

H-Index

Concepts

All Affiliations

Nippon Steel (Japan)

About

Masatoshi Kanaya is an author at Nippon Steel (Japan) specializing in engineering, materials engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	15	738
2	Applied Physics	12	14	706
3	Chemical Engineering	1	1	106
4	Chemistry	1	1	43
5	Electrical Engineering	1	1	12

Masatoshi Kanaya

Publications

755

Citations

H-Index

Page 1

	Year	Citations
Sublimation growth of SiC single crystalline ingots on faces perpendicular to the (0001) basal plane Jun Takahashi, Masatoshi Kanaya, Yuichiro Fujiwara Journal of Crystal Growth Materials ScienceMaterials EngineeringEngineeringCeramic MaterialSurface Science	1994	152
Mechanism of Molten KOH Etching of SiC Single Crystals: Comparative Study with Thermal Oxidation Masakazu Katsuno, Noboru Ohtani, Jun Takahashi, Japanese Journal of Applied Physics Materials EngineeringMaterials ScienceChemical EngineeringMolten KohHigh Temperature Materials	1999	106
Controlled sublimation growth of single crystalline 4H-SiC and 6H-SiC and identification of polytypes by x-ray diffraction Masatoshi Kanaya, Jun Takahashi, Yuichiro Fujiwara, Applied Physics Letters Materials ScienceMaterials EngineeringSingle CrystallineEngineeringPolytype-controlled Crystal Growth	1991	97
Structural defects in α-SiC single crystals grown by the modified-Lely method Jun Takahashi, Noboru Ohtani, Masatoshi Kanaya Journal of Crystal Growth Materials ScienceMaterials EngineeringModified-lely MethodEngineeringCrystalline Defects	1996	76
Step bunching behaviour on the {0001} surface of hexagonal SiC Noboru Ohtani, Masakazu Katsuno, Takashi Aigo, Journal of Crystal Growth EngineeringMechanical EngineeringApplied PhysicsHexagonal SicCarbide	2000	57
Nitrogen Incorporation Kinetics during the Sublimation Growth of 6H and 4H SiC Kozo Onoue, Takeshi Nishikawa, Masakazu Katsuno, Japanese Journal of Applied Physics Materials EngineeringMaterials ScienceHigh Temperature MaterialsEngineeringGrowth Rate	1996	43
Influence of the Seed Face Polarity on the Sublimation Growth of α-SiC Jun Takahashi, Noboru Ohtani, Masatoshi Kanaya Japanese Journal of Applied Physics Materials EngineeringMaterials ScienceSemiconductorsOptical MaterialsSeed Face Polarity	1995	35
Impurity incorporation kinetics during modified-Lely growth of SiC Noboru Ohtani, Masakazu Katsuno, Jun Takahashi, Journal of Applied Physics Materials ScienceMaterials EngineeringImpurity Incorporation KineticsEngineeringImpurity Incorporation	1998	32
Structural properties of subgrain boundaries in bulk SiC crystals Masakazu Katsuno, Noboru Ohtani, Takashi Aigo, Journal of Crystal Growth Materials ScienceEngineeringCondensed Matter PhysicsBulk Sic CrystalsCarbide	2000	32
The Growth of Single Crystal of 3C-SiC on the Si Substrate by the MBE Method Using Multi Electron Beam Heating Shigeo Kaneda, Yoshiki Sakamoto, C. Nishi, Japanese Journal of Applied Physics Materials ScienceMaterials EngineeringSi SubstrateEpitaxial GrowthEngineering	1986	26

Page 1