Controlled sublimation growth of single crystalline 4H-SiC and 6H-SiC and identification of polytypes by x-ray diffraction

Abstract

Polytype-controlled crystal growth of SiC was carried out by using a sublimation method. Production yields as high as 80% and 85% for 4H and 6H single crystals were obtained, respectively. We observed in x-ray diffraction pattern of SiC that space-group-forbidden peaks appear periodically among (000l) peaks. Their intensity is strong enough to be distinguished. These peaks represent the periodicity along the c axis of each polytypic modification of SiC. X-ray diffractometry using these peaks is quite useful and easy for a clear identification of the SiC polytypes.