Taizo Hoshino

Investigation of heavily nitrogen-doped n+ 4H–SiC crystals grown by physical vapor transport

Noboru Ohtani, Masakazu Katsuno, Masashi Nakabayashi et al. · Journal of Crystal Growth · 2009 · 81 citations

Natural Sciences, Materials Engineering, Materials Science +16

Propagation behavior of threading dislocations during physical vapor transport growth of silicon carbide (SiC) single crystals

Noboru Ohtani, Masakazu Katsuno, Hiroshi Tsuge et al. · Journal of Crystal Growth · 2005 · 40 citations

Natural Sciences, Materials Engineering, Materials Science +17

Analysis of Basal Plane Bending and Basal Plane Dislocations in 4H-SiC Single Crystals

Noboru Ohtani, Masakazu Katsuno, Tatsuo Fujimoto et al. · Japanese Journal of Applied Physics · 2009 · 27 citations

Natural Sciences, Materials Engineering, Materials Science +15

Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities

Masashi Nakabayashi, Tatsuo Fujimoto, Masakazu Katsuno et al. · Materials science forum · 2008 · 25 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Dislocation processes during SiC bulk crystal growth

Noboru Ohtani, Masakazu Katsuno, Hiroshi Tsuge et al. · Microelectronic Engineering · 2005 · 23 citations

Natural Sciences, Materials Engineering, Materials Science +12