2006 · 24 citations · 7 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyDevice CharacterizationDevice ReliabilityMetal-oxide-semiconductor Field-effect TransistorsSemiconductor ReliabilityShort-channel EffectsCmos ReliabilityFilamentation InstabilityGate Oxide ReliabilityOxide BreakdownPolysiliconSemiconductor Oxide Thin FilmsThin Oxide FilmsThin Oxide Layers
Electrical and SEM analysis of gate-silicided (GS) and gate-non-silicided (GNS) ESD NMOSFETs in a 65nm bulk CMOS technology show that the failure mechanism switches away from classical drain-to-source filamentation when the silicidation between the silicide-blocked drain/source and the polysilicon gate is avoided. For 2.5V thick oxide devices, drain-to-substrate junction shorting was observed, whereas, for 1.0V thin oxide devices, gate-oxide breakdown failure occurred
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High performance and low power transistors integrated in 65nm bulk CMOS technology
Zuying Luo, An Steegen, M. Eller et al. · 2005 · 81 citations
The effect of silicide on ESD performance
Guido Notermans, A. Heringa, M. van Dort et al. · 2003 · 41 citations
Engineering, Electrical Engineering, Electronic Materials +16