High-Temperature Properties of Drain Current Variability in Scaled Field-Effect Transistors Analyzed by Decomposition Method

Abstract

The properties of drain current variability in field-effect transistors (FETs) at high temperature are experimentally investigated. It is found that the on-state drain current ( I ON ) at high temperature has a strong correlation with I ON at room temperature and that there is no anomalous I ON change from room temperature to high temperature. It is also found that I ON variability at high temperature is smaller than that at room temperature. The origin of the decrease in I ON variability with increasing temperature is analyzed by the decomposition method developed in our previous work. It is clarified that the decrease in the current–onset voltage component plays a dominant role, especially in the saturation region. Moreover, it is also clarified that thermal excitation of carriers suppresses current–onset voltage variability, and ultimately the current–onset voltage component of I ON variability with increasing temperature.