IEEE Journal of Solid-State Circuits · 1994 · 102 citations · 5 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyDevice CharacterizationDevice ModelingMetal-oxide-semiconductor Field-effect TransistorsCurrent DensityDevice Mismatch AnalysisMetal-oxide-semiconductor Field-effect Transistor ModelingMismatch Analysis
Measures the current matching properties of MOS transistors operated in the weak inversion region. The authors measured a total of about 1400 PMOS and NMOS transistors produced in four different processes and report the results in terms of mismatch dependance on current density, device dimensions, and substrate voltage, without using any specific model for the transistor.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
5
Random errors in MOS capacitors
J.-B. Shyu, Gábor C. Temes, Kai Yao · IEEE Journal of Solid-State Circuits · 1982 · 159 citations
Engineering, Computer Engineering, Electrical Engineering +17