4H-SiC epitaxial layer growth by trichlorosilane (TCS)

Deep levels created by low energy electron irradiation in 4H-SiC

L. Storasta, J. P. Bergman, Erik Janzén et al. · Journal of Applied Physics · 2004 · 279 citations

Natural Sciences, Materials Engineering, Materials Science +17

Electrically active defects in <i>n</i>-type 4H–silicon carbide grown in a vertical hot-wall reactor

J. Zhang, L. Storasta, J. P. Bergman et al. · Journal of Applied Physics · 2003 · 187 citations

Engineering, Materials Engineering, Materials Science +17

Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes

J.H. Zhao, P. Alexandrov, X. Li · IEEE Electron Device Letters · 2003 · 103 citations

Engineering, Electrical Engineering, Materials Science +17

Properties and origins of different stacking faults that cause degradation in SiC PiN diodes

H. Jacobson, J. P. Bergman, C. Hallin et al. · Journal of Applied Physics · 2004 · 97 citations · Full text

Engineering, Electrical Engineering, Materials Science +15

High temperature CVD growth of SiC

A. Ellison, J. Zhang, Jeffrey M. Peterson et al. · Materials Science and Engineering B · 1999 · 89 citations

Natural Sciences, Materials Engineering, Materials Science +10