P. Alexandrov - Concepedia

Author

P. Alexandrov

Rutgers, The State University of New Jersey

Also Known As

Alexandrov, Petre, P A Alexandrov, P Alexandrov, P. A. Alexandrov, P. Alexandrov, P.A. ALEXANDROV, Petre Alexandrov

Publications

1.1K

Citations

H-Index

Concepts

All Affiliations

Rutgers, The State University of New Jersey United Silicon Carbide (United States)United States Army United States Department of the Army

About

P. Alexandrov is an author at Rutgers, The State University of New Jersey specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	26	922
2	Electrical Engineering	18	24	798
3	Applied Physics	16	19	749
4	Natural Sciences	1	1	59
5	Computer Engineering	1	1	22

P. Alexandrov

Publications

Citations

H-Index

Page 1

	Year	Citations
Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes J.H. Zhao, P. Alexandrov, X. Li IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringSchottky Barrier HeightEngineeringHigh Voltage Engineering	2003	103
4H-SiC normally-off vertical junction field-effect transistor with high current density K. Tone, J.H. Zhao, Leonid Fursin, IEEE Electron Device Letters Semiconductor Technology4H-silicon CarbideElectrical EngineeringEngineeringHigh Voltage Engineering	2003	69
Dielectric properties of TiO2-films reactively sputtered from Ti in an RF magnetron P. Alexandrov, J. Koprinarova, D Todorov Vacuum Materials ScienceMagnetismDielectric PropertiesEngineeringOxide Electronics	1996	65
Radiation-hard semiconductor detectors for SuperLHC M. Bruzzi, J. Adey, A. Al-Ajili, Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment EngineeringRadiation DetectionPhysicsNatural SciencesParticle Physics	2005	59
Fabrication and Characterization of 11-kV Normally Off 4H-SiC Trenched-and-Implanted Vertical Junction FET J.H. Zhao, P. Alexandrov, J. Zhang, IEEE Electron Device Letters Device ModelingElectrical EngineeringEngineeringSpecific ResistanceHigh Voltage Engineering	2004	58
On the temperature coefficient of 4H-SiC BJT current gain X. Li, Yanbin Luo, Leonid Fursin, Solid-State Electronics Electrical EngineeringEngineeringBias Temperature InstabilityPower Semiconductor DeviceTemperature Coefficient	2002	57
1.88-$\hbox{m}\Omega\cdot\hbox{cm}^{2}$ 1650-V Normally on 4H-SiC TI-VJFET Yuzhu Li, P. Alexandrov, Jian Hui Zhao IEEE Transactions on Electron Devices EngineeringMeasurementPower ElectronicsSemiconductor DeviceSemiconductors	2008	48
Fabrication and Characterization of High-Current-Gain 4H-SiC Bipolar Junction Transistors Jianhui Zhang, Xueqing Li, P. Alexandrov, IEEE Transactions on Electron Devices Semiconductor Technology4H-sic Bjt WaferElectrical EngineeringSemiconductor DeviceEngineering	2008	48
Demonstration of first 9.2 kV 4H-SiC bipolar junction transistor J. Zhang, J.H. Zhao, P. Alexandrov, Electronics Letters Semiconductor TechnologyElectrical EngineeringEngineeringHigh Voltage EngineeringBipolar Junction Transistor	2004	40
1000-V 9.1-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ Normally Off 4H-SiC Lateral RESURF JFET for Power Integrated Circuit Applications Yongxi Zhang, Kuang Sheng, Ming Su, IEEE Electron Device Letters Device ModelingElectrical Engineering\Omega \Cdot \HboxEngineeringSemiconductor Device	2007	36

Page 1