Concepedia

P. Alexandrov

PA

31

Publications

1K

Citations

20

H-Index

1996

Active since

Affiliations

Rutgers, The State University of New Jersey(Current)

United Silicon Carbide (United States)

United States Army

United States Department of the Army

P. Alexandrov is an author at Rutgers, The State University of New Jersey specializing in engineering, electrical engineering, and microelectronics.

Top concepts

EngineeringElectrical EngineeringMicroelectronicsApplied PhysicsPower ElectronicsHigh Voltage EngineeringElectronic EngineeringNanoelectronicsPower Electronic DevicesPower Semiconductors

Publications per year

1996–2015

31

Publications

31

Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes

J.H. Zhao, P. Alexandrov, X. Li · IEEE Electron Device Letters · 2003 · 103 citations

Semiconductor Technology, Electrical Engineering, Schottky Barrier Height +8

4H-SiC normally-off vertical junction field-effect transistor with high current density

K. Tone, J.H. Zhao, Leonid Fursin et al. · IEEE Electron Device Letters · 2003 · 69 citations

Semiconductor Technology, 4H-silicon Carbide, Electrical Engineering +13

Dielectric properties of TiO2-films reactively sputtered from Ti in an RF magnetron

P. Alexandrov, J. Koprinarova, D Todorov · Vacuum · 1996 · 65 citations

Materials Science, Magnetism, Dielectric Properties +8

Radiation-hard semiconductor detectors for SuperLHC

M. Bruzzi, J. Adey, A. Al-Ajili et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 2005 · 59 citations · Full text

Engineering, Radiation Detection, Physics +5

Fabrication and Characterization of 11-kV Normally Off 4H-SiC Trenched-and-Implanted Vertical Junction FET

J.H. Zhao, P. Alexandrov, J. Zhang et al. · IEEE Electron Device Letters · 2004 · 58 citations

Device Modeling, Electrical Engineering, Engineering +10

Rows per page

1–5 of 31