Leonid Fursin

4H-SiC normally-off vertical junction field-effect transistor with high current density

K. Tone, J.H. Zhao, Leonid Fursin et al. · IEEE Electron Device Letters · 2003 · 69 citations

Semiconductor Technology, 4H-silicon Carbide, Electrical Engineering +13

On the temperature coefficient of 4H-SiC BJT current gain

X. Li, Yanbin Luo, Leonid Fursin et al. · Solid-State Electronics · 2002 · 57 citations

Electrical Engineering, Engineering, Bias Temperature Instability +7

Nickel ohmic contacts to p- and n-type 4H-SiC

Leonid Fursin, J.H. Zhao, M. Weiner · Electronics Letters · 2001 · 50 citations

Materials Science, Semiconductor Technology, Electrical Engineering +10

Fabrication and Characterization of High-Current-Gain 4H-SiC Bipolar Junction Transistors

Jianhui Zhang, Xueqing Li, P. Alexandrov et al. · IEEE Transactions on Electron Devices · 2008 · 48 citations

Semiconductor Technology, 4H-sic Bjt Wafer, Electrical Engineering +9

Demonstration of 4H-SiC power bipolar junctiontransistors

Yanbin Luo, Leonid Fursin, J.H. Zhao · Electronics Letters · 2000 · 45 citations