K. Tone - Concepedia

Author

K. Tone

Rutgers, The State University of New Jersey

Also Known As

K Tone, K. Tone, Kiyoshi Tone, Kiyoshi Tone Kiyoshi Tone

Publications

1.8K

Citations

H-Index

Concepts

All Affiliations

Rutgers, The State University of New Jersey United Silicon Carbide (United States)Intel (United States)Rutgers Sexual and Reproductive Health and Rights

About

K. Tone is an author at Rutgers, The State University of New Jersey specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	23	1.7K
2	Applied Physics	15	18	1.4K
3	Computer Engineering	3	3	768
4	Chemistry	2	2	119
5	Chemical Engineering	1	1	23

K. Tone

Publications

1.7K

Citations

H-Index

Page 1

	Year	Citations
A 14nm logic technology featuring 2<sup>nd</sup>-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 &#x00B5;m<sup>2</sup> SRAM cell size S. Natarajan, M. Agostinelli, Sheikh A. Akbar, -Generation FinfetRectangular FinsEngineeringVlsi DesignIntegrated Circuits	2014	521
45nm High-k + metal gate strain-enhanced transistors C. Auth, A. Cappellani, Jang‐Soo Chun, Materials EngineeringElectrical EngineeringEngineeringStress-enhancement TechniquesAdvanced Packaging (Semiconductors)	2008	204
High performance 32nm logic technology featuring 2<sup>nd</sup> generation high-k + metal gate transistors P. Packan, Sheikh A. Akbar, M Armstrong, Nm Logic TechnologyElectrical EngineeringEngineeringVlsi DesignNanoelectronics	2009	184
A 32nm logic technology featuring 2<sup>nd</sup>-generation high-k + metal-gate transistors, enhanced channel strain and 0.171&#x03BC;m<sup>2</sup> SRAM cell size in a 291Mb array S. Natarajan, M Armstrong, M. Bost, EngineeringVlsi DesignChannel StrainIntegrated CircuitsSemiconductor Device	2008	184
4H-SiC normally-off vertical junction field-effect transistor with high current density K. Tone, J.H. Zhao, Leonid Fursin, IEEE Electron Device Letters Semiconductor Technology4H-silicon CarbideElectrical EngineeringEngineeringHigh Voltage Engineering	2003	69
Characterization of Oxidized GaAs (001) Surfaces Using Temperature Programed Desorption and X-Ray Photoelectron Spectroscopy K. Tone, Masamichi Yamada, Yuichi Ide, Japanese Journal of Applied Physics EngineeringOxide MasksChemistrySemiconductorsOxide Desorption	1992	68
An advanced low power, high performance, strained channel 65nm technology S. Tyagi, C. Kenyon, S.-H. Lee, Low-power ElectronicsElectrical EngineeringEnhanced Transistor PerformanceEngineeringVlsi Design	2005	63
Effect of Atomic Hydrogen on GaAs (001) Surface Oxide Studied by Temperature-Programmed Desorption Masamichi Yamada, Yuichi Ide, K. Tone Japanese Journal of Applied Physics Materials ScienceIi-vi SemiconductorEngineeringOxide ElectronicsMolecular Hydrogen	1992	51
Theoretical and Experimental Study of 4H-SiC Junction Edge Termination Xueqing Li, K. Tone, Li Hui Cao, Materials science forum Electrical EngineeringEngineeringPower DeviceApplied PhysicsPower Semiconductor Device	2000	41
Multistep junction termination extension for SiCpower devices X. Li, K. Tone, Leonid Fursin, Electronics Letters	2001	37

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