X. Li

Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes

J.H. Zhao, P. Alexandrov, X. Li · IEEE Electron Device Letters · 2003 · 103 citations

Semiconductor Technology, Electrical Engineering, Schottky Barrier Height +8

On the temperature coefficient of 4H-SiC BJT current gain

X. Li, Yanbin Luo, Leonid Fursin et al. · Solid-State Electronics · 2002 · 57 citations

Electrical Engineering, Engineering, Bias Temperature Instability +7

Multistep junction termination extension for SiCpower devices

X. Li, K. Tone, Leonid Fursin et al. · Electronics Letters · 2001 · 37 citations

3.6 m cm2, 1726 V 4H-SiC normally-off trenched-and-implanted vertical JFETs and circuit applications

J.H. Zhao, K. Tone, X. Li et al. · IEE Proceedings - Circuits Devices and Systems · 2004 · 24 citations

Electrical Engineering, Engineering, A Darlington Transistor +11

An IGBT and MOSFET gated SiC bipolar junction transistor

Huijie Yu, Jih‐Sheng Lai, X. Li et al. · Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344) · 2003 · 17 citations

Electrical Engineering, Engineering, Bipolar Transistor +8