Electronics Letters · 2001 · 37 citations · 0 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingDevice SimulationIntegrated Circuit DevicesWide-bandgap Semiconductor DevicesBreakdown VoltageHigh Current Ion ImplantationIon Implantation EffectsPin DiodesPower Electronics DevicesSilicon CarbideSilicon Carbide (Sic) MaterialsSilicon Carbide Power Devices
A multistep junction termination extension (MJTE) for SiC power devices, which uses a single-step ion implantation and multiple dry etches, is studied by way of two-dimensional numerical simulations and confirmed by fabricating and measuring a high-voltage implanted 4H-SiC pin diode. It is shown that MJTE is a very effective approach and can be easily implemented in experiment.