M. Pan

On the temperature coefficient of 4H-SiC BJT current gain

X. Li, Yanbin Luo, Leonid Fursin et al. · Solid-State Electronics · 2002 · 57 citations

Engineering, Electrical Engineering, Materials Science +14

Multistep junction termination extension for SiCpower devices

X. Li, K. Tone, Leonid Fursin et al. · Electronics Letters · 2001 · 37 citations

Engineering, Electrical Engineering, Electronic Materials +15

Monte Carlo simulation of 4H-SiC IMPATT diodes

J.H. Zhao, V. Gruz̆inskis, Yanbin Luo et al. · Semiconductor Science and Technology · 2000 · 36 citations

Engineering, Electrical Engineering, Materials Science +17

Demonstration of high voltage (600–1300 V), high current (10–140 A), fast recovery 4H-SiC p-i-n/Schottky(MPS) barrier diodes

P. Alexandrov, William Wright, M. Pan et al. · Solid-State Electronics · 2002 · 23 citations

Engineering, Electrical Engineering, Materials Science +17

Design of a novel planar normally-off power VJFET in 4H-SiC

J.H. Zhao, X Li, K. Tone et al. · Solid-State Electronics · 2002 · 20 citations

Engineering, Electrical Engineering, Materials Science +11