Danilo Crippa

4H SiC Epitaxial Growth with Chlorine Addition

G. Galvagno, G. Fóti, Marco Mauceri et al. · Chemical Vapor Deposition · 2006 · 89 citations

Engineering, Electrical Engineering, Materials Science +17

4H-SiC epitaxial layer growth by trichlorosilane (TCS)

Francesco La Via, Gaetano Izzo, Marco Mauceri et al. · Journal of Crystal Growth · 2008 · 75 citations

Engineering, Materials Engineering, Materials Science +12

New Achievements on CVD Based Methods for SiC Epitaxial Growth

Danilo Crippa, Gian Luca Valente, Alfonso Ruggiero et al. · Materials science forum · 2005 · 52 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Paving the way toward the world's first 200mm SiC pilot line

Mattia Musolino, Xueping Xu, Hui Wang et al. · Materials Science in Semiconductor Processing · 2021 · 46 citations

Engineering, Electrical Engineering, Industrial Engineering +4

SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor

Stefano Leone, Marco Mauceri, Giuseppe Pistone et al. · Materials science forum · 2006 · 29 citations · Full text

Engineering, Materials Engineering, Materials Science +17