G. Galvagno

4H SiC Epitaxial Growth with Chlorine Addition

G. Galvagno, G. Fóti, Marco Mauceri et al. · Chemical Vapor Deposition · 2006 · 89 citations

Engineering, Electrical Engineering, Materials Science +17

Diffusion and outdiffusion of aluminium implanted into silicon

G. Galvagno, Francesco La Via, F. Priolo et al. · Semiconductor Science and Technology · 1993 · 29 citations

Engineering, Materials Engineering, Materials Science +17

Optical and electrical properties of 4H-SiC epitaxial layer grown with HCl addition

L. Calcagno, Gaetano Izzo, Grazia Litrico et al. · Journal of Applied Physics · 2007 · 25 citations

Engineering, Materials Engineering, Materials Science +17

Axial channeling of boron ions into silicon

A. La Ferla, G. Galvagno, V. Raineri et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1992 · 25 citations

Natural Sciences, Materials Engineering, Materials Science +10

High growth rate process in a SiC horizontal CVD reactor using HCl

Francesco La Via, G. Galvagno, Fabrizio Roccaforte et al. · Microelectronic Engineering · 2005 · 24 citations

Engineering, Chemical Engineering, Materials Engineering +7