Gian Luca Valente

4H SiC Epitaxial Growth with Chlorine Addition

Francesco La Via, G. Galvagno, G. Fóti et al. · Chemical Vapor Deposition · 2006 · 86 citations

Materials Engineering, Materials Science, Electrical Engineering +13

New Achievements on CVD Based Methods for SiC Epitaxial Growth

Danilo Crippa, Gian Luca Valente, Alfonso Ruggiero et al. · Materials science forum · 2005 · 52 citations

Materials Science, Electrical Engineering, Wafer Scale Processing +11

SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor

Stefano Leone, Marco Mauceri, Giuseppe Pistone et al. · Materials science forum · 2006 · 28 citations

Materials Science, Materials Engineering, Chemical Engineering +14

High growth rate process in a SiC horizontal CVD reactor using HCl

Francesco La Via, G. Galvagno, Fabrizio Roccaforte et al. · Microelectronic Engineering · 2005 · 24 citations

Electrical Engineering, Engineering, Fusion Reactor Material

Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process

Francesco La Via, G. Galvagno, Andrea Firrincieli et al. · Materials science forum · 2006 · 15 citations

Engineering, Semiconductors, Standard Process +17