Power handling limits and degradation of large area AlGaN/GaN RF-HEMTs

Self-heating in high-power AlGaN-GaN HFETs

R. Gaška, A. Osinsky, J. Yang et al. · IEEE Electron Device Letters · 1998 · 298 citations

Engineering, Electrical Engineering, Materials Science +17

Evaluation of the temperature stability of AlGaN/GaN heterostructure FETs

I. Daumiller, C. Kirchner, M. Kamp et al. · IEEE Electron Device Letters · 1999 · 182 citations

Engineering, Electrical Engineering, Materials Science +17

Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs

V. Tilak, B. Green, V. Kaper et al. · IEEE Electron Device Letters · 2001 · 152 citations

Engineering, Electrical Engineering, Materials Science +17

High power AlGaN/GaN HEMTs for microwave applications

Yifeng Wu, B.P. Keller, S. Keller et al. · Solid-State Electronics · 1997 · 78 citations

Engineering, Electrical Engineering, Materials Science +14

Device characteristics of scaled GaN/AlGaN MODFETs

Nam Nguyen, C. Nguyen, D.E. Grider · Electronics Letters · 1998 · 30 citations

Engineering, Electrical Engineering, Materials Science +17