H. Leier

Dimensionality dependence of the band-gap renormalization in two- and three-dimensional electron-hole plasmas in GaAs

G. Tränkle, H. Leier, A. Forchel et al. · Physical Review Letters · 1987 · 251 citations

Categoryquantum Electronics, Engineering, Physics +9

Current instabilities in GaN-based devices

I. Daumiller, D. Théron, Christophe Gaquière et al. · IEEE Electron Device Letters · 2001 · 150 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14

Heat-spreading diamond films for GaN-based high-power transistor devices

M. Seelmann‐Eggebert, P. Meisen, F. Schaudel et al. · Diamond and Related Materials · 2001 · 83 citations

Heat-spreading Diamond Films, Electrical Engineering, Engineering +2

Mass and dose dependence of ion-implantation-induced intermixing of GaAs/GaAlAs quantum-well structures

H. Leier, A. Forchel, G. Hörcher et al. · Journal of Applied Physics · 1990 · 68 citations

Semiconductors, Gaas/gaalas Quantum-well Structures, Defect Diffusion +15

AlGaN/GaN HEMTs on Si(111) with 6.6 W/mm output power density

R. Behtash, H. Tobler, Martin Neuburger et al. · Electronics Letters · 2003 · 62 citations