Concepedia

High power AlGaN/GaN HEMTs for microwave applications

Yifeng Wu, B.P. Keller, S. Keller, D. Kapolnek, P. Kozodoy, Steven P. DenBaars, Umesh K. Mishra

Solid-State Electronics · 1997 · 78 citations · 5 references

Concepts

EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicrowave EngineeringSemiconductor MaterialsMicrowave MaterialsMicrowave Semiconductor DevicesSemiconductor Device MaterialsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsGallium NitrideGallium Nitride (Gan) MaterialsHigh-power MaterialsMicrowave DevicesSemiconductor Materials For Microwave Devices

References

5

Electron mobility in two-dimensional electron gas in AIGaN/GaN heterostructures and in bulk GaN

M. S. Shur, Boris Gelmont, M. Asif Khan · Journal of Electronic Materials · 1996 · 224 citations

Engineering, Materials Science, Physics +16

Thermal resistance of heat sinks with temperature-dependent conductivity

W. B. Joyce · Solid-State Electronics · 1975 · 157 citations

Engineering, Materials Engineering, Materials Science +16

Short-channel GaN/AlGaN doped channel heterostructurefieldeffect transistors with 36.1 cutoff frequency

M. Asif Khan, Q. Chen, M. S. Shur et al. · Electronics Letters · 1996 · 122 citations

Engineering, Electrical Engineering, Materials Science +17

Theoretical study of electron transport in gallium nitride

Nabil S. Mansour, K. W. Kim, M. A. Littlejohn · Journal of Applied Physics · 1995 · 97 citations

Engineering, Materials Science, Physics +17

High-power GaAs FET amplifiers

S.L. Hurst · Microelectronics Journal · 1994 · 95 citations

Engineering, Electrical Engineering, Microelectronics +11