Concepedia

Short-channel GaN/AlGaN doped channel heterostructurefieldeffect transistors with 36.1 cutoff frequency

M. Asif Khan, Q. Chen, M. S. Shur, B.T. Dermott, J.A. Higgins, Jinwook Burm, W. J. Schaff, L.F. Eastman

Electronics Letters · 1996 · 122 citations · 3 references

DOI

Concepts

Abstract

The authors report on the improved microwave performance of short AlGaN/GaN doped channel heterostructure field effect transistors. These transistors with 0.25 µm gates have a cutoff frequency fT up to 36.1 GHz (the highest reported value for a wide-bandgap semiconductor) and a maximum oscillation frequency fmax ≃ 70.8 GHz. This value of fT is the highest value reported for any wide-bandgap semiconductor device.

References

3

Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor

M. Asif Khan, J. N. Kuznia, D. T. Olson et al. · Applied Physics Letters · 1994 · 354 citations

, , +17

Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C

M. Asif Khan, M. S. Shur, John N. Kuznia et al. · Applied Physics Letters · 1995 · 273 citations

, , +17

AlGaAs/InGaAs/GaAs quantum well doped channel heterostructure field effect transistors

P.P. Ruden, M. S. Shur, A.I. Akinwande et al. · IEEE Transactions on Electron Devices · 1990 · 33 citations

, , +17