Jinwook Burm

Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor

M. Asif Khan, J. N. Kuznia, D. T. Olson et al. · Applied Physics Letters · 1994 · 354 citations

Engineering, Electrical Engineering, Materials Science +17

Short-channel GaN/AlGaN doped channel heterostructurefieldeffect transistors with 36.1 cutoff frequency

M. Asif Khan, Q. Chen, M. S. Shur et al. · Electronics Letters · 1996 · 122 citations

Engineering, Electrical Engineering, Materials Science +17

CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz

M. Asif Khan, Q. Chen, M. S. Shur et al. · IEEE Electron Device Letters · 1996 · 115 citations

Engineering, Electrical Engineering, Materials Engineering +17

Ultra-low resistive ohmic contacts on n-GaN using Si implantation

Jinwook Burm, Kenneth K. Chu, William A. Davis et al. · Applied Physics Letters · 1997 · 114 citations

Engineering, Materials Engineering, Materials Science +17

GaN based heterostructure for high power devices

M. Asif Khan, Q. Chen, M. S. Shur et al. · Solid-State Electronics · 1997 · 84 citations · Full text

Engineering, Electrical Engineering, Materials Science +17