Applied Physics Letters · 1997 · 114 citations · 10 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDopingInterface EngineeringSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor SurfacesWide-bandgap Semiconductor DevicesActivationContact ResistanceContact Resistance MeasurementElectrical Contact ResistanceGallium Nitride (Gan) MaterialsMolecular Beam EpitaxyOhmic ContactsTransmission Line Modeling
Implanted ohmic contacts were made on molecular beam epitaxy grown GaN materials. Si was implanted at a doping density of about 4×1020 cm-3 to decrease the contact resistance of the contact, followed by an activation anneal at 1150 °C for 30 s. The overlay metal Ti/Au was evaporated. Four-probe measurements were performed on transmission line model patterns. The measured maximum contact resistance was 0.097 Ω mm and the apparent specific contact resistance was 3.6×10−8 Ω cm2.
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Very low resistance multilayer Ohmic contact to <i>n</i>-GaN
Zhifang Fan, S. Noor Mohammad, Wook Kim et al. · Applied Physics Letters · 1996 · 455 citations
Low resistance ohmic contacts on wide band-gap GaN
Mao Lin, Zhenqiang Ma, Fengyi Huang et al. · Applied Physics Letters · 1994 · 438 citations