T. J. Eustis

Ultra-low resistive ohmic contacts on n-GaN using Si implantation

Jinwook Burm, Kenneth K. Chu, William A. Davis et al. · Applied Physics Letters · 1997 · 114 citations

Engineering, Materials Engineering, Materials Science +17

High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy

Michael J. Murphy, K. Chu, Hao Wu et al. · Applied Physics Letters · 1999 · 51 citations

Engineering, Electrical Engineering, Materials Science +17

Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN/GaN based heterostructures

Michael J. Murphy, K. Chu, Hao Wu et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1999 · 41 citations

Engineering, Materials Science, Physics +17

Resonant Magnetopolaron Effects due to Interface Phonons in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>GaAs</mml:mi><mml:mi>/</mml:mi><mml:mi>AlGaAs</mml:mi></mml:math>Multiple Quantum Well Structures

Y. J. Wang, H. Nickel, B. D. McCombe et al. · Physical Review Letters · 1997 · 38 citations · Full text

Natural Sciences, Materials Science, Physics +16

High Frequency AlGaN/GaN MODFET's

L.F. Eastman, K. Chu, W. J. Schaff et al. · MRS Internet Journal of Nitride Semiconductor Research · 1997 · 29 citations · Full text

Engineering, Electrical Engineering, Materials Science +17