Concepedia

Author

J.A. Higgins

Rockwell Automation (United States)

Also Known As

Higgins, J. Aiden, Higgins,John A., J A Higgins, J Aiden Higgins, J. A. Higgins, J. AIDEN HIGGINS, J. Aiden HIGGINS, J. Aiden Higgins, J. Higgins, J.A. Higgins

135

Publications

2.9K

Citations

27

H-Index

67

Concepts

All Affiliations

Rockwell Automation (United States)Omega Optics (United States)University of Virginia
JH

About

J.A. Higgins is an author at Rockwell Automation (United States) specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

25

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2.5K

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Applied Physics

20

38

1.7K

3

Computer Engineering

4

4

61

4

Chemistry

2

2

100

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Education

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J.A. Higgins

×

61

Publications

2.6K

Citations

26

H-Index

YearCitations

GaAlAs/GaAs heterojunction bipolar transistors: issues and prospects for application

P.M. Asbeck, Mau-Chung Frank Chang, J.A. Higgins,

IEEE Transactions on Electron Devices

1989

209

Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors

M. Asif Khan, Q. Chen, Jinwei Yang,

IEEE Electron Device Letters

1996

180

MEM relay for reconfigurable RF circuits

R.E. Mihailovich, Moonil Kim, J.B. Hacker,

IEEE Microwave and Wireless Components Letters

2001

158

Short-channel GaN/AlGaN doped channel heterostructurefieldeffect transistors with 36.1 cutoff frequency

M. Asif Khan, Q. Chen, M. S. Shur,

Electronics Letters

1996

121

High-power 10-GHz operation of AlGaN HFET's on insulating SiC

G.J. Sullivan, M.Y. Chen, J.A. Higgins,

IEEE Electron Device Letters

1998

121

CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz

M. Asif Khan, Q. Chen, M. S. Shur,

IEEE Electron Device Letters

1996

115

AlGaAs/GaAs heterojunction bipolar transistors fabricated using a self-aligned dual-lift-off process

Mau-Chung Frank Chang, P.M. Asbeck, K.C. Wang,

IEEE Electron Device Letters

1987

107

Development of a 100-W 200-GHz High Bandwidth mm-Wave Amplifier

Mark Field, Takuji Kimura, John Atkinson,

IEEE Transactions on Electron Devices

2018

97

Heterojunction Bipolar Transistors for Microwave and Millimeter-Wave Integrated Circuits

P.M. Asbeck, Mau-Chung Frank Chang, K.-C. Wang,

IEEE Transactions on Microwave Theory and Techniques

1987

94

Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits

P.M. Asbeck, Mau-Chung Frank Chang, K.-C. Wang,

IEEE Transactions on Electron Devices

1987

88

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