J.A. Higgins

GaAlAs/GaAs heterojunction bipolar transistors: issues and prospects for application

P.M. Asbeck, Mau-Chung Frank Chang, J.A. Higgins et al. · IEEE Transactions on Electron Devices · 1989 · 209 citations

Microwave Circuits, Electrical Engineering, Digital Performance Status +9

Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors

M. Asif Khan, Q. Chen, Jinwei Yang et al. · IEEE Electron Device Letters · 1996 · 180 citations

Wide-bandgap Semiconductor, μM Gate Algan/gan, Electrical Engineering +7

MEM relay for reconfigurable RF circuits

R.E. Mihailovich, Moonil Kim, J.B. Hacker et al. · IEEE Microwave and Wireless Components Letters · 2001 · 158 citations

Electrical Engineering, Engineering, Radio Frequency +12

Short-channel GaN/AlGaN doped channel heterostructurefieldeffect transistors with 36.1 cutoff frequency

M. Asif Khan, Q. Chen, M. S. Shur et al. · Electronics Letters · 1996 · 121 citations

High-power 10-GHz operation of AlGaN HFET's on insulating SiC

G.J. Sullivan, M.Y. Chen, J.A. Higgins et al. · IEEE Electron Device Letters · 1998 · 121 citations

Wide-bandgap Semiconductor, Electrical Engineering, High Thermal Conductivity +12