IEEE Electron Device Letters · 1998 · 122 citations · 14 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationHigh-frequency Semiconductor DevicesMicrowave Semiconductor DevicesSemiconductor Device MaterialsSemiconductor PhysicsThermal Properties Of SemiconductorsGallium Nitride (Gan) MaterialsMicrowave DevicesPower DensitySilicon CarbideSilicon Carbide (Sic) MaterialsSilicon Carbide High-frequency DevicesThermal ConductivityThermal Effects In Microwave Devices
We report the first high-power RF characterization of AlGaN HFET's fabricated on electrically insulating SiC substrates. A record total power of 2.3 W at 10 GHz was measured from a 1280-μm wide HFET at V/sub ds/=33 V. An excellent RF power density of 2.8 W/mm was measured on a 320-μm wide HFET. These values are a result of the high thermal conductivity of SiC, relative to the typical substrate, sapphire.
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Piezoelectric charge densities in AlGaN/GaN HFETs
P.M. Asbeck, Edward T. Yu, S. S. Lau et al. · Electronics Letters · 1997 · 277 citations
High-temperature performance of AlGaN/GaN HFETs on SiC substrates
R. Gaška, Q. Chen, Jinwei Yang et al. · IEEE Electron Device Letters · 1997 · 218 citations
AlGaN/GaN HEMTs grown on SiC substrates
S.C. Binari, Joan M. Redwing, G. Kelner et al. · Electronics Letters · 1997 · 161 citations