IEEE Transactions on Nuclear Science · 1996 · 44 citations · 51 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyDevice ReliabilityElectronics TechnologyIntegrated Circuit DesignIntegrated Circuit DevicesSemiconductor ReliabilityCharge Transfer MechanismsGallium Arsenide Field-effect TransistorsIsolationRadiation BeltsRadiation-hard DevicesRadiation-tolerant ElectronicsRadiation-tolerant Semiconductor DevicesSingle Event Effects
The single-event upset (SEU) characteristics of GaAs devices and circuits are reviewed. GaAs FET-based integrated circuits (ICs) are susceptible to upsets from both cosmic-ray heavy ions and protons trapped in the Earth's radiation belts. The origin of the SEU sensitivity of GaAs ICs is discussed in terms of both device-level and circuit-level considerations. At the device level, efficient charge-enhancement mechanisms through which more charge can be collected than is deposited by the ion have a significant negative impact on the SEU characteristics of GaAs ICs. At the circuit level, different GaAs digital logic topologies exhibit different levels of sensitivity to SEU because of variations in parameters, including logic levels, capacitances, and the degree of gate or peripheral isolation. The operational and SEU characteristics of several different GaAs logic families are discussed. Recent advances in materials and processing that provide possible solutions to the SEU problem are addressed.
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New MBE buffer used to eliminate backgating in GaAs MESFETs
F. W. Smith, A. R. Calawa, C.-L. Chen et al. · IEEE Electron Device Letters · 1988 · 623 citations
A. Krotkus, S. Marcinkevičius, J. Jasiński et al. · Applied Physics Letters · 1995 · 79 citations