J. Jasiński

Picosecond carrier lifetime in GaAs implanted with high doses of As ions: An alternative material to low-temperature GaAs for optoelectronic applications

A. Krotkus, S. Marcinkevičius, J. Jasiński et al. · Applied Physics Letters · 1995 · 79 citations

Optical Materials, Nonstoichiometric Gaas, Engineering +18

Optical and electrical properties of boron doped diamond thin conductive films deposited on fused silica glass substrates

Mateusz Ficek, Michał Sobaszek, Marcin Gnyba et al. · Applied Surface Science · 2016 · 45 citations

Materials Science, Diamond-like Carbon, Electrical Engineering +7

Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al

Andrzej Taube, E. Kamińska, Maciej Kozubal et al. · physica status solidi (a) · 2015 · 44 citations

Materials Science, Semiconductors, Electrical Engineering +13

High resistivity and picosecond carrier lifetime of GaAs implanted with MeV Ga ions at high fluences

C. Jagadish, Hark Hoe Tan, J. Jasiński et al. · Applied Physics Letters · 1995 · 23 citations

Engineering, Arsenic Implanted Gaas, Optoelectronic Devices +19

Interlayer excitons in MoSe₂/2D perovskite hybrid heterostructures – the interplay between charge and energy transfer

Miriam Karpińska, J. Jasiński, Roman Kempt et al. · Nanoscale · 2022 · 23 citations · Full text