E. Kamińska

Determination of the effective mass of GaN from infrared reflectivity and Hall effect

P. Perlin, E. Litwin‐Staszewska, B. Suchanek et al. · Applied Physics Letters · 1996 · 149 citations

Perpendicular Effective Mass, Semiconductor Technology, Electrical Engineering +8

Theory of doping properties of Ag acceptors in ZnO

O. Volniańska, P. Bogusławski, J. Kaczkowski et al. · Physical Review B · 2009 · 96 citations

Rare Earth Mineral, Engineering, Chemistry +16

Interband optical absorption in free standing layer of Ga0.96In0.04As0.99N0.01

P. Perlin, P. Wiśniewski, C. Skierbiszewski et al. · Applied Physics Letters · 2000 · 73 citations

Wide-bandgap Semiconductor, Ii-vi Semiconductor, Optical Materials +12

Photoluminescence study of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-type ZnO:Sb prepared by thermal oxidation of the Zn-Sb starting material

E. Przeździecka, E. Kamińska, Iwona Pasternak et al. · Physical Review B · 2007 · 73 citations

Engineering, Luminescent Glass, Thermal Oxidation +18

Ising Quantum Hall Ferromagnet in Magnetically Doped Quantum Wells

J. Jaroszyński, T. Andrearczyk, G. Karczewski et al. · Physical Review Letters · 2002 · 71 citations · Full text