P. Bogusławski

Native defects in gallium nitride

P. Bogusławski, E. L. Briggs, J. Bernholc · Physical review. B, Condensed matter · 1995 · 463 citations

Hexagonal Gan, Wide-bandgap Semiconductor, Electrical Engineering +12

Towards the Identification of the Dominant Donor in GaN

P. Perlin, T. Suski, H. Teisseyre et al. · Physical Review Letters · 1995 · 300 citations

Materials Science, Wide-bandgap Semiconductor, Photoluminescence +14

Doping properties of C, Si, and Ge impurities in GaN and AlN

P. Bogusławski, J. Bernholc · Physical review. B, Condensed matter · 1997 · 262 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +19

Amphoteric properties of substitutional carbon impurity in GaN and AlN

P. Bogusławski, E. L. Briggs, J. Bernholc · Applied Physics Letters · 1996 · 112 citations

Materials Engineering, Semiconductors, Quantum Molecular Dynamics +15

<i>Ab Initio</i>Studies of the Diffusion Barriers at Single-Height Si(100) Steps

Qiong Zhang, Christopher Roland, P. Bogusławski et al. · Physical Review Letters · 1995 · 110 citations

Materials Science, Engineering, Diffusion Resistance +14