Maciej Kozubal

Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al

Andrzej Taube, E. Kamińska, Maciej Kozubal et al. · physica status solidi (a) · 2015 · 44 citations

Materials Science, Semiconductors, Electrical Engineering +13

Diffusion and impurity segregation in hydrogen-implanted silicon carbide

A. Barcz, Maciej Kozubal, R. Jakieła et al. · Journal of Applied Physics · 2014 · 34 citations

Materials Science, Ion Implantation, Engineering +12

Flexible IGZO Schottky diodes on paper

Jakub Kaczmarski, Michał A. Borysiewicz, Krzysztof Piskorski et al. · Semiconductor Science and Technology · 2017 · 21 citations

Materials Science, Semiconductor Technology, Electrical Engineering +14

The interplay between damage- and chemical-induced isolation mechanism in Fe+-implanted AlGaN/GaN HEMT structures

K. Pągowska, Maciej Kozubal, Andrzej Taube et al. · Materials Science in Semiconductor Processing · 2021 · 13 citations

Materials Science, Materials Engineering, Electrical Engineering +8

Ohmic contact formation to GaN by Si+ implantation doping: Retarding layer, implantation fluence, encapsulation, and activation annealing temperature studies

Maciej Kozubal, K. Pągowska, Andrzej Taube et al. · Materials Science in Semiconductor Processing · 2020 · 11 citations