Concepedia

Si implanted reactivation in GaN grown on sapphire using AlN and oxide cap layers

F. Cayrel, Anne Elisabeth Bazin, Mohamed Lamhamdi, Y. Benchanaa, O. Ménard, Arnaud Yvon, Emmanuel Collard, Daniel Alquier

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2011 · 15 citations · 13 references

Concepts

EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDopingIii-v SemiconductorsIon ImplantationSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor InterfacesGallium NitrideGallium Nitride (Gan) MaterialsOxide Sacrificial Layers

References

13

AlGaN/GaN high electron mobility transistors with InGaN back-barriers

Tomás Palacios, A. Chakraborty, S. Heikman et al. · IEEE Electron Device Letters · 2005 · 379 citations

Engineering, Electrical Engineering, Materials Science +17

The Encyclopedia of advanced materials

Choice Reviews Online · 1995 · 270 citations

Natural Sciences, Materials Engineering, Materials Science +12

Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates

R. Gaška, J. Yang, A. Osinsky et al. · Applied Physics Letters · 1998 · 214 citations

Engineering, Materials Science, Physics +17

High voltage (450 V) GaN Schottky rectifiers

Zvonimir Bandić, P. M. Bridger, E. C. Piquette et al. · Applied Physics Letters · 1999 · 153 citations

Engineering, Electrical Engineering, Materials Science +17

<i>The Encyclopedia of Advanced Materials</i>

D. Bloor, R. J. Brook, M. C. Flemings et al. · Physics Today · 1995 · 130 citations

Natural Sciences, Materials Science, Physics +6