Oxide Sacrificial Layers

Oxide Sacrificial Layers is a thin film material, typically composed of silicon dioxide or similar dielectric compounds, selectively deposited and subsequently removed during microfabrication processes to enable the release or patterning of overlying structural layers in MEMS and nanodevices.

108

Publications

4.8K

Citations

582

Authors

178

Institutions

Publications per year

2017–2026

27

Authors

582

  1. KN
    K. Najafi

    University of Michigan, United States

    5 publications · 515 citations

    5

    h-index

  2. CD
    Ching‐Liang Dai

    National Chung Hsing University, Taiwan

    4 publications · 82 citations

    4

    h-index

  3. HY
    Harold Y. Hwang

    Stanford University, United States

    4 publications · 793 citations

    4

    h-index

  4. HK
    Haluk Külah

    Middle East Technical University, Türkiye

    4 publications · 346 citations

    4

    h-index

  5. YH
    Yasuyuki Hikita

    Stanford University, United States

    4 publications · 793 citations

    4

    h-index

1–5 of 582

Venues

  1. Journal of Microelectromechanical Systems

    9 publications · 774 citations

    9

    h-index

  2. Applied Physics Letters

    4 publications · 178 citations

    4

    h-index

  3. Sensors

    4 publications · 82 citations

    4

    h-index

  4. Sensors and Actuators A Physical

    4 publications · 128 citations

    4

    h-index

  5. Thin Solid Films

    5 publications · 73 citations

    4

    h-index

1–5