Oxide Sacrificial Layers
Oxide Sacrificial Layers is a thin film material, typically composed of silicon dioxide or similar dielectric compounds, selectively deposited and subsequently removed during microfabrication processes to enable the release or patterning of overlying structural layers in MEMS and nanodevices.
108
Publications
4.8K
Citations
582
Authors
178
Institutions
Publications per year
2017–2026
27
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Stanford University
Stanford, United States
6 h-index
31 publications
3.2K citations

National Chung Hsing University
Taichung, Taiwan
5 h-index
17 publications
325 citations
University of Michigan
Ann Arbor, United States
5 h-index
14 publications
1.4K citations
University of California, Berkeley
Berkeley, United States
5 h-index
18 publications
1.5K citations

Chinese Academy of Sciences
Beijing, China
4 h-index
25 publications
1.2K citations
University of Chinese Academy of Sciences
Beijing, China
4 h-index
9 publications
316 citations
SLAC National Accelerator Laboratory
Menlo Park, United States
4 h-index
17 publications
3.2K citations
Institut de Ciència de Materials de Barcelona
Cerdanyola del Vallès, Spain
3 h-index
15 publications
460 citations
1–8 of 178
9 publications · 774 citations
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4 publications · 178 citations
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4 publications · 82 citations
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4 publications · 128 citations
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5 publications · 73 citations
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