Anne Elisabeth Bazin

Experimental observation and analytical model of the stress gradient inversion in 3C-SiC layers on silicon

Marcin Zieliński, Jean-François Michaud, S. Jiao et al. · Journal of Applied Physics · 2012 · 23 citations

Natural Sciences, Materials Engineering, Materials Science +17

Si implanted reactivation in GaN grown on sapphire using AlN and oxide cap layers

F. Cayrel, Anne Elisabeth Bazin, Mohamed Lamhamdi et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2011 · 15 citations

Engineering, Materials Engineering, Materials Science +12

Ti–Ni ohmic contacts on 3C–SiC doped by nitrogen or phosphorus implantation

Anne Elisabeth Bazin, Jean-François Michaud, Cécile Autret-Lambert et al. · Materials Science and Engineering B · 2010 · 15 citations

Engineering, Materials Engineering, Materials Science +15

Recent Advances in Surface Preparation of Silicon Carbide and other Wide Band Gap Materials

Marcin Zieliński, C. Moisson, Sylvain Monnoye et al. · Materials science forum · 2010 · 14 citations · Full text

Engineering, Materials Engineering, Materials Science +17

High Quality Ohmic Contacts on n-type 3C-SiC Obtained by High and Low Process Temperature

Anne Elisabeth Bazin, Jean-François Michaud, F. Cayrel et al. · AIP conference proceedings · 2010 · 14 citations

Natural Sciences, Materials Engineering, Materials Science +8