NOVASiC (France)

Defects in virgin and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msup><mml:mi mathvariant="normal">N</mml:mi><mml:mo>+</mml:mo></mml:msup></mml:math>-implanted ZnO single crystals studied by positron annihilation, Hall effect, and deep-level transient spectroscopy

G. Bräuer, W. Anwand, W. Skorupa et al. · Physical Review B · 2006 · 144 citations

Engineering, Positron Annihilation Spectroscopy, Defect Tolerance +17

Epitaxial graphene on cubic SiC(111)/Si(111) substrate

Abdelkarim Ouerghi, A. Kahouli, D. Lucot et al. · Applied Physics Letters · 2010 · 104 citations

Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide

F. Lafont, Rebeca Ribeiro-Palau, Dimitrios Kazazis et al. · Nature Communications · 2015 · 93 citations · Full text

Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

A. Michon, S. Vézian, Abdelkarim Ouerghi et al. · Applied Physics Letters · 2010 · 81 citations

Materials Science, Graphene Nanomeshes, Electronic Devices +10

Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy

E. Monroy, Eirini Sarigiannidou, Frédéric Fossard et al. · Applied Physics Letters · 2004 · 73 citations

Materials Science, Materials Engineering, Wide-bandgap Semiconductor +14