C. Moisson

Defects in virgin and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msup><mml:mi mathvariant="normal">N</mml:mi><mml:mo>+</mml:mo></mml:msup></mml:math>-implanted ZnO single crystals studied by positron annihilation, Hall effect, and deep-level transient spectroscopy

G. Bräuer, W. Anwand, W. Skorupa et al. · Physical Review B · 2006 · 144 citations

Engineering, Positron Annihilation Spectroscopy, Defect Tolerance +17

Optical properties of GaN quantum dots grown on nonpolar (11-20) SiC by molecular-beam epitaxy

S. Founta, Fabian Rol, E. Bellet‐Amalric et al. · Applied Physics Letters · 2005 · 66 citations

Aluminium Nitride, Optical Materials, Engineering +17

Elaboration of (111) oriented 3C–SiC/Si layers for template application in nitride epitaxy

Marcin Zieliński, Marc Portail, Sébastien Roy et al. · Materials Science and Engineering B · 2009 · 28 citations

Materials Science, Materials Engineering, Semiconductor Technology +8

Comparative characterization of differently grown ZnO single crystals by positron annihilation and Hall effect

G. Bräuer, W. Anwand, W. Skorupa et al. · Superlattices and Microstructures · 2007 · 21 citations

Materials Science, Engineering, Positron Annihilation Spectroscopy +8

Electrothermally driven high-frequency piezoresistive SiC cantilevers for dynamic atomic force microscopy

Rachida Boubekri, E. Cambril, Laurent Couraud et al. · Journal of Applied Physics · 2014 · 18 citations · Full text

Engineering, Microscopy, Mechanical Engineering +18