Resonantly driven coherent oscillations in a solid-state quantum emitter

Edward B. Flagg, Andreas Müller, John W. Robertson, +6

Nature Physics

Quantum ScienceCoherent OscillationsEngineeringPhysicsCavity Qed +2

Optical properties of GaN quantum dots grown on nonpolar (11-20) SiC by molecular-beam epitaxy

S. Founta, Fabian Rol, E. Bellet‐Amalric, +5

Applied Physics Letters

Aluminium NitrideOptical MaterialsEngineeringOptoelectronic DevicesEmission Energy +15

Study of isolated cubic GaN quantum dots by low-temperature cathodoluminescence

Jean Philippe Garayt, Jean‐Michel Gérard, F. Enjalbert, +10

Physica E Low-dimensional Systems and Nanostructures

Materials SciencePhotoluminescenceEngineeringNanotechnologyApplied Physics +5

Anisotropic morphology of nonpolar a-plane GaN quantum dots and quantum wells

S. Founta, Catherine Bougerol, H. Mariette, +2

Journal of Applied Physics

Anisotropic MorphologyEngineeringNonpolar A-plane GanSemiconductor NanostructuresSemiconductors +15

Reduction of the internal electric field in wurtzite a-plane GaN self-assembled quantum dots

N. Garro, A. Cros, J. A. Budagosky, +6

Applied Physics Letters

EngineeringSemiconductor NanostructuresInternal Electric FieldNanoelectronicsQuantum Dots +15

Anisotropic strain relaxation in a-plane GaN quantum dots

S. Founta, Johann Coraux, D. Jalabert, +9

Journal of Applied Physics

EngineeringMedium Energy IonSemiconductor NanostructuresStrain ProfileNanoscale Science +14

Optical and spin coherence of excitons in zinc-blende GaN

Christelle Brimont, Mathieu Gallart, O. Crégut, +8

Journal of Applied Physics

SemiconductorsQuantum ScienceSpintronicsWide-bandgap SemiconductorEngineering +12

Direct Evidence of Interlevel Exciton Transitions Mediated by Single Phonons in a Semiconductor Quantum Dot Using Resonance Fluorescence Spectroscopy

Edward B. Flagg, John W. Robertson, S. Founta, +4

Physical Review Letters

SemiconductorsPhotoluminescenceEngineeringQuantum ComputingPhysics +13

Optical properties of single non‐polar GaN quantum dots

Fabian Rol, B. Gayral, S. Founta, +6

physica status solidi (b)

EngineeringLuminescence PropertySemiconductorsPhotodetectorsOptical Properties +14

Growth of GaN quantum dots on nonpolar <i>A</i> ‐plane SiC by molecular‐beam epitaxy

S. Founta, Fabian Rol, E. Bellet‐Amalric, +5

physica status solidi (b)

SemiconductorsMaterials ScienceAluminium NitrideSemiconductor TechnologyEngineering +13