J. A. Budagosky

Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature

Rafael Mata, Karine Hestroffer, J. A. Budagosky et al. · Journal of Crystal Growth · 2011 · 48 citations

Wide-bandgap Semiconductor, Engineering, Physics +7

Reduction of the internal electric field in wurtzite a-plane GaN self-assembled quantum dots

N. Garro, A. Cros, J. A. Budagosky et al. · Applied Physics Letters · 2005 · 34 citations · Full text

Engineering, Semiconductor Nanostructures, Internal Electric Field +17

Optimal control of high-harmonic generation by intense few-cycle pulses

Janne Solanpää, J. A. Budagosky, N. I. Shvetsov-Shilovski et al. · Physical Review A · 2014 · 26 citations · Full text

Paper-based ZnO self-powered sensors and nanogenerators by plasma technology

Xabier García‐Casas, Francisco J. Aparicio, J. A. Budagosky et al. · Nano Energy · 2023 · 25 citations · Full text

Influence of strain in the reduction of the internal electric field in GaN/AlN quantum dots grown on <i>a</i>‐plane 6H‐SiC

A. Cros, J. A. Budagosky, A. García‐Cristóbal et al. · physica status solidi (b) · 2006 · 11 citations · Full text

Wide-bandgap Semiconductor, Engineering, Gan/aln Quantum Dots +16