Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature - Concepedia

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Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature

48

Citations

22

References

2011

Year

Rafael Mata, Karine Hestroffer, J. A. Budagosky, A. Cros, Catherine Bougerol, H. Renevier, B. Daudin

Journal of Crystal Growth

Wide-bandgap SemiconductorEngineeringPhysicsNanomaterialsNanotechnologyApplied PhysicsGan Power DeviceMolecular Beam EpitaxyCategoryiii-v SemiconductorGan Nanowires

References

	Year	Citations

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