Marc Portail - Concepedia

Author

Marc Portail

Centre National de la Recherche Scientifique ORCID

Also Known As

M Portail, M. Portail, MARC PORTAIL, Marc Portail, Portail M, Portail, M., Portail, Marc

146

Publications

1.9K

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique NOVASiC (France)Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications Université de Tours Université Côte d'Azur

About

Marc Portail is an author at Centre National de la Recherche Scientifique specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	41	1.2K
2	Applied Physics	19	36	1.1K
3	Electrical Engineering	9	9	207
4	Chemistry	3	3	85
5	Chemical Engineering	1	1	49

Marc Portail

Publications

1.5K

Citations

H-Index

Page 1

	Year	Citations
Epitaxial graphene on cubic SiC(111)/Si(111) substrate Abdelkarim Ouerghi, A. Kahouli, D. Lucot, Applied Physics Letters	2010	104
Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide F. Lafont, Rebeca Ribeiro-Palau, Dimitrios Kazazis, Nature Communications	2015	93
Screening and engineering of colour centres in diamond Tobias Lühmann, Nicole Raatz, Roger John, Journal of Physics D Applied Physics Optical MaterialsEngineeringHigh ThroughputSemiconductorsIon Implantation	2018	88
Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition A. Michon, S. Vézian, Abdelkarim Ouerghi, Applied Physics Letters Materials ScienceGraphene NanomeshesElectronic DevicesEngineeringNanotechnology	2010	81
Chondrules as direct thermochemical sensors of solar protoplanetary disk gas G. Libourel, Marc Portail Science Advances	2018	75
Evidence of electrical activity of extended defects in 3C–SiC grown on Si Xi Song, Jean-François Michaud, F. Cayrel, Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringSemiconductorsEngineering	2010	65
Structural coherency of epitaxial graphene on 3C–SiC(111) epilayers on Si(111) Abdelkarim Ouerghi, Rachid Belkhou, M. Marangolo, Applied Physics Letters EngineeringSemiconductorsGraphene ExhibitsGraphene-based Nano-antennasElectronic Devices	2010	64
Comparative study of the role of the nucleation stage on the final crystalline quality of (111) and (100) silicon carbide films deposited on silicon substrates. Marc Portail, Marcin Zieliński, Thierry Chassagne, Journal of Applied Physics Materials ScienceNucleation StepCrystalline QualityEngineeringCrystalline Defects	2009	63
Epitaxial graphene on 3C-SiC(111) pseudosubstrate: Structural and electronic properties Abdelkarim Ouerghi, M. Marangolo, Rachid Belkhou, Physical Review B Materials ScienceGraphene NanomeshesEpitaxial GrapheneEngineeringGraphene Quantum Dot	2010	63
Strain and wafer curvature of 3C‐SiC films on silicon: influence of the growth conditions Marcin Zieliński, Saliou Ndiaye, Thierry Chassagne, physica status solidi (a) Optical MaterialsEngineeringOptoelectronic DevicesThin Film Process TechnologyCreep Effect	2007	59

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