Jean-François Michaud

Transfer of 3 in GaAs film on silicon substrateby proton implantation process

E. Jalaguier, B. Aspar, S. Pocas et al. · Electronics Letters · 1998 · 83 citations

Activation of aluminum implanted at high doses in 4H–SiC

Jean‐Marie Bluet, Julien Pernot, J. Camassel et al. · Journal of Applied Physics · 2000 · 69 citations

Materials Engineering, Materials Science, Electrical Engineering +14

Transfers of 2-inch GaN films onto sapphire substrates using Smart Cut ^TM technology

A. Tauzin, T. Akatsu, Marc Rabarot et al. · Electronics Letters · 2005 · 67 citations

Evidence of electrical activity of extended defects in 3C–SiC grown on Si

Xi Song, Jean-François Michaud, F. Cayrel et al. · Applied Physics Letters · 2010 · 65 citations

Materials Engineering, Materials Science, Electrical Engineering +15

Smart-Cut® process using metallic bonding:Application to transfer of Si, GaAs, InP thin films

B. Aspar, E. Jalaguier, Alexandre Mas et al. · Electronics Letters · 1999 · 42 citations