Ti–Ni ohmic contacts on 3C–SiC doped by nitrogen or phosphorus implantation

Production of large-area single-crystal wafers of cubic SiC for semiconductor devices

Shigehiro Nishino, J. A. Powell · Applied Physics Letters · 1983 · 926 citations

Engineering, Materials Engineering, Materials Science +17

The effects of contact size and non-zero metal resistance on the determination of specific contact resistance

Gregory S. Marlow, Mukunda B. Das · Solid-State Electronics · 1982 · 456 citations

Natural Sciences, Materials Engineering, Materials Science +8

Infrared reflectance evaluation of chemically vapor deposited β-SiC films grown on Si substrates

R. T. Holm, P. Klein, P. E. R. Nordquist · Journal of Applied Physics · 1986 · 94 citations

Natural Sciences, Materials Engineering, Materials Science +17

Improved Ni based composite Ohmic contact to <i>n</i>-SiC for high temperature and high power device applications

M. W. Cole, P. C. Joshi, C. Hubbard et al. · Journal of Applied Physics · 2000 · 61 citations

Engineering, Materials Engineering, Materials Science +17

Characterization of phosphorus implantation in 4H-SiC

V. Khemka, R. N. Patel, N. Ramungul et al. · Journal of Electronic Materials · 1999 · 52 citations

Engineering, Materials Engineering, Materials Science +11