Japanese Journal of Applied Physics · 2008 · 11 citations · 8 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignDevice ModelingDevice SimulationField-effect TransistorsIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsShort-channel EffectsCorner EffectsCorner FeaturesField-effect Transistor SimulationFin Field-effect TransistorsLeakageLeakage Current ReductionThreshold VoltageWork Function
We proposed a new body-tied triple-gate fin-type field-effect transistor (bulk FinFET) which has different gate work-functions on the top- and side-channel regions. The effect of gate work-function on the characteristics of the bulk FinFETs was studied by using three-dimensional device simulator. By increasing the top-gate work-function (ΦTG) at a fixed side-gate work-function (ΦSG) of the bulk FinFET, threshold voltage (Vth) increases and off-state leakage current (Ioff) reduces significantly without increasing doping concentration of the fin body. The bulk FinFETs with the low body doping and the threshold voltage controlled by midgap-gate work-function shown very small dependence on the corner shape, but shown very poor short channel effect (SCE). It was also shown that devices with the Vth controlled by body doping shows significant corner effect and the effect becomes small as the fin width decreases. By applying our approach, we could reduce the off-current by more than 10 times without increasing fin body doping concentration.
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J.-P. Colinge, M.-H. Gao, A. Romano‐Rodrı́guez et al. · 2002 · 350 citations
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