P-Channel Tri-Gate FinFETs Featuring $\hbox{Ni}_{1 - y}\hbox{Pt}_{y} \hbox{SiGe}$ Source/Drain Contacts for Enhanced Drive Current Performance

Abstract

We report the integration of nickel platinum germanosilicide (Ni <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-y</sub> Pt <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">y</sub> SiGe) contacts in tri-gate FinFETs with silicon germanium source/drain stressors for enhanced drive current performance. The structural and electrical properties of Ni <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-y</sub> Pt <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">y</sub> SiGe contacts with platinum (Pt) concentrations up to 20 atomic % (at. %) were explored for FinFET integration. Our results show that Ni <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-y</sub> Pt <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">y</sub> SiGe incorporated with 10 at. % Pt shows superior morphological stability, a suitably low sheet resistivity and the lowest Schottky hole barrier height (Phi <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">P</sub> <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">B</sup> ) among the candidates evaluated. The low Phi <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">P</sub> <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">B</sup> (0.309 eV) provides a 15% reduction in series resistance R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">series</sub> . With a superior morphological stability and reduced R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">series</sub> , FinFETs integrated with contacts exhibit an overall 18% improvement in drive current compared to FinFETs with NiSiGe contacts.