Rinus Tek-Po Lee

P-Channel Tri-Gate FinFETs Featuring $\hbox{Ni}_{1 - y}\hbox{Pt}_{y} \hbox{SiGe}$ Source/Drain Contacts for Enhanced Drive Current Performance

Rinus Tek-Po Lee, Kian-Ming Tan, Andy Eu-Jin Lim et al. · IEEE Electron Device Letters · 2008 · 18 citations

Semiconductor Technology, Electrical Engineering, Engineering +9

Pulsed Laser Annealing of Silicon-Carbon Source/Drain in MuGFETs for Enhanced Dopant Activation and High Substitutional Carbon Concentration

Alvin Tian-Yi Koh, Rinus Tek-Po Lee, Fangyue Liu et al. · IEEE Electron Device Letters · 2008 · 18 citations

Semiconductor Technology, Electrical Engineering, Silicon-carbon Source/drain +14

Achieving Conduction Band-Edge Schottky Barrier Height for Arsenic-Segregated Nickel Aluminide Disilicide and Implementation in FinFETs With Ultra-Narrow Fin Widths

Rinus Tek-Po Lee, Tsung-Yang Liow, Kian-Ming Tan et al. · IEEE Electron Device Letters · 2008 · 14 citations

Materials Science, Materials Engineering, Electrical Engineering +12

Route to Low Parasitic Resistance in MuGFETs with Silicon-Carbon Source/Drain: Integration of Novel Low Barrier Ni(M)Si:C Metal Silicides and Pulsed Laser Annealing

Rinus Tek-Po Lee, Alvin Tian-Yi Koh, Fangyue Liu et al. · 2007 · 12 citations

Engineering, Optoelectronic Devices, Silicon On Insulator +18