JSTS Journal of Semiconductor Technology and Science · 2013 · 10 citations · 16 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice ModelingDevice SimulationField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsSemiconductor PhysicsSurface ChargeDesign ConstraintsGate-all-around TransistorsInterface Trap ModelingMetal-oxide-semiconductor Field-effect Transistor ModelingNumerical Device SimulationNumerical SimulationSurface PotentialSurface Potential Analysis
An explicit surface potential calculation method of gate-all-around MOSFET (GAAMOSFET) devices which takes into account both interface trap charge and varying doping levels is presented. The results of the method are extensively verified by numerical simulation. Results from the model are used to find qualitative and quantitative effect of interface trap charge on subthreshold slope (SS) of GAAMOSFET devices. Further, design constraints of GAAMOSFET devices with emphasis on the effect of interface trap charge on device SS performance are investigated.
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