Concepedia

Gate-all-around Transistors

Gate-All-Around Transistors is a type of metal-oxide-semiconductor field-effect transistor in which the gate electrode fully surrounds the semiconductor channel in a three-dimensional architecture, enabling superior electrostatic control and enhanced scalability compared to planar or fin-based transistor geometries.

772

Publications

34.2K

Citations

3.1K

Authors

493

Institutions

Publications per year

2017–2026

353

Variants

Gaa TransistorsGaafetGaafets

Parents

Publications

772

Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

N. Loubet, Terence B. Hook, P. Montanini et al. · 2017 · 988 citations

, , +15

High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices

Navab Singh, Ajay Agarwal, L. K. Bera et al. · IEEE Electron Device Letters · 2006 · 639 citations

, , +17

Multiple-gate SOI MOSFETs: device design guidelines

Jong‐Tae Park, J.-P. Colinge · IEEE Transactions on Electron Devices · 2002 · 485 citations

, , +16

Review of: "The changes in the width of the nano transistor channel due to the field effect of the gate around can cause undesirable changes and loss of mobility"

brain Cita O · Qeios · 2023 · 468 citations · Full text

, , +15

Silicon-on-insulator 'gate-all-around device'

J.-P. Colinge, M.-H. Gao, A. Romano‐Rodrı́guez et al. · 2002 · 350 citations

, , +17

1–5 of 772

Authors

3.1K

  1. NS
    Navab Singh

    Institute of Microelectronics, Singapore

    26 publications · 2.4K citations

    21

    h-index

  2. NC
    Nadine Collaert

    IMEC, Belgium

    23 publications · 939 citations

    17

    h-index

  3. NH
    Naoto Horiguchi

    IMEC, Belgium

    20 publications · 1K citations

    16

    h-index

  4. DK
    Dim‐Lee Kwong

    Institute of Microelectronics, Singapore

    19 publications · 1K citations

    16

    h-index

  5. GE
    Geert Eneman

    IMEC, Belgium

    16 publications · 1.1K citations

    15

    h-index

1–5 of 3.1K

Institutions

493

  1. IMEC

    Leuven, Belgium

    30 h-index

    644 publications

    40.3K citations

  2. Institute of Microelectronics

    Beijing, China

    25 h-index

    424 publications

    18.8K citations

  3. National Yang Ming Chiao Tung University

    Hsinchu, Taiwan

    23 h-index

    187 publications

    6.5K citations

  4. Institute of Microelectronics

    Singapore, Singapore

    23 h-index

    194 publications

    18.2K citations

  5. Chinese Academy of Sciences

    Beijing, China

    23 h-index

    327 publications

    15.5K citations

  6. Samsung (South Korea)

    Seoul, South Korea

    21 h-index

    228 publications

    28.8K citations

  7. Commissariat à l'Énergie Atomique et aux Énergies Alternatives

    Paris, France

    20 h-index

    200 publications

    9.4K citations

  8. Institut polytechnique de Grenoble

    Grenoble, France

    20 h-index

    158 publications

    7.8K citations

1–8 of 493

Venues

  1. IEEE Transactions on Electron Devices

    136 publications · 6.8K citations

    46

    h-index

  2. IEEE Electron Device Letters

    81 publications · 5.6K citations

    40

    h-index

  3. Solid-State Electronics

    28 publications · 1K citations

    22

    h-index

  4. Applied Physics Letters

    20 publications · 623 citations

    18

    h-index

  5. Silicon

    21 publications · 688 citations

    17

    h-index

1–5